WFW9N90 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFW9N90 Datasheet PDF : 7 Pages
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Features
■ 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 58nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
WFW9N90
Silicon N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
PD
Total Power Dissipation(@Tc=25℃)
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
900
9
5.7
27
±30
663
15
4.5
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
0.83
℃/W
-
-
50
℃/W
Rev.A Aug.2010
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