ISL9R18120G2(2014) データシートの表示（PDF） - Fairchild Semiconductor
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ISL9R18120G2 Datasheet PDF : 9 Pages
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February 2014
ISL9R18120G2, ISL9R18120P2,
ISL9R18120S3S
18 A, 1200 V, STEALTH™ Diode
Features
• Stealth Recovery trr = 300 ns (@ IF = 18 A)
• Max Forward Voltage, VF = 3.3 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Description
The ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S is a
STEALTH™ diode optimized for low loss performance in high
frequency hard switched applications. The STEALTH™ family
exhibits low reverse recovery current (IRR) and exceptionally soft
recovery under typical operating conditions. This device is
intended for use as a free wheeling or boost diode in power
supplies and other power switching applications. The low
IRR and short ta phase reduce loss in switching transistors. The
soft recovery minimizes ringing, expanding the range of
conditions under which the diode may be operated without the
use of additional snubber circuitry. Consider using the
STEALTH™ diode with an SMPS IGBT to provide the most
efficient and highest power density design at lower cost.
Package
Symbol
2 LEAD TO-247
JEDEC TO-220AC
JEDEC TO-263AB
ANODE
CATHODE
ANODE
CATHODE
CATHODE
K
(FLANGE)
N/C
ANODE
A
CATHODE
CATHODE
(BOTTOM SIDE
(FLANGE)
METAL)
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Rating
Unit
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 92oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
1200
V
1200
V
1200
V
18
A
36
A
200
A
125
W
20
mJ
-55 to 175
°C
300
°C
260
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
1
ISL9R18120G2, ISL9R18120P2,
ISL9R18120S3S Rev. C2
www.fairchildsemi.com
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