ISL9R18120G2(2014) データシートの表示（PDF） - Fairchild Semiconductor
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ISL9R18120G2 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
Top Mark
R18120G2
R18120P2
R18120S3
Package
TO-247
TO-220AC
TO-263AB
Packing Mathod
Tube
Tube
Reel
Tape Width
N/A
N/A
24mm
Quantity
30
50
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 1200 V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 18 A
TC = 25°C
TC = 125°C
- 2.7 3.3 V
- 2.5 3.1 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10 V, IF = 0 A
-
69
-
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
Irr
Qrr
trr
S
Irr
Qrr
trr
S
Irr
Qrr
dIM/dt
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1 A, dIF/dt = 100 A/µs, VR = 30 V
IF = 18 A, dIF/dt = 100 A/µs, VR = 30 V
IF = 18 A,
dIF/dt = 200 A/µs,
VR = 780 V, TC = 25°C
IF = 18 A,
dIF/dt = 200 A/µs,
VR = 780 V,
TC = 125°C
IF = 18 A,
dIF/dt = 1000 A/µs,
VR = 780 V,
TC = 125°C
-
38 45 ns
-
60 70 ns
- 300 -
ns
- 6.5 -
A
- 950
-
nC
- 400 -
ns
- 7.0 -
-
- 8.0 -
A
-
2.0
-
µC
- 235 -
ns
- 5.2 -
-
-
22
-
A
-
2.1
-
µC
- 370 - A/µs
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-247, TO-220, TO-263
Thermal Resistance Junction to Ambient TO-247
Thermal Resistance Junction to Ambient TO-220, TO-263
-
- 1.0 °C/W
-
-
30 °C/W
-
-
62 °C/W
©2002 Fairchild Semiconductor Corporation
2
ISL9R18120G2, ISL9R18120P2,
ISL9R18120S3S Rev. C2
www.fairchildsemi.com
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