RF1S640SM9A データシートの表示（PDF） - Fairchild Semiconductor
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RF1S640SM9A Datasheet PDF : 7 Pages
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IRF640, RF1S640, RF1S640SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 2)
SYMBOL
TEST CONDITIONS
ISD
Modified MOSFET
D
ISDM
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
MIN TYP MAX UNITS
-
-
18
A
-
-
72
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13)
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
-
-
2.0
V
120
240
530
ns
1.3
2.8
5.6
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 3.37mH, RG = 25Ω, peak IAS = 18A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
10-1
tP, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
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