RF1S640SM9A データシートの表示（PDF） - Fairchild Semiconductor
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RF1S640SM9A Datasheet PDF : 7 Pages
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IRF640, RF1S640, RF1S640SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
VGS = 0V, f = 1MHz
2400
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1800
CISS
1200
COSS
600
CRSS
0
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
25oC
9
150oC
6
3
0
0
6
12
18
24
30
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
1000
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
150oC
100
25oC
10
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 28A
16
12
8
VDS = 40V
VDS = 100V
VDS = 160V
4
0
0
15
30
45
60
75
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
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