ZXMN3A02N8TA データシートの表示（PDF） - Zetex => Diodes

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ZXMN3A02N8TA

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN3A02N8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Gate Source Voltage

Continuous Drain Current VGS=-10V; TA=25°C (b)

VGS=-10V; TA=70°C (b)

VGS=-10V; TA=25°C (a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode) (c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

30

20

9.0

7.2

7.3

44

3.2

44

1.56

12.5

2.5

20

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

Junction to Ambient (b)

RθJA

RθJA

80

°C/W

50

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.

SEMICONDUCTORS

2

ISSUE 3 - AUGUST 2003

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