ZXMN3A02N8TC データシートの表示（PDF） - Zetex => Diodes

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ZXMN3A02N8TC

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN3A02N8

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

STATIC

PARAMETER

SYMBOL

Drain-Source Breakdown Voltage

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

td(on)

tr

td(off)

tf

Qg

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

Qg

Qgs

Qgd

VSD

trr

Qrr

MIN.

30

1.0

TYP.

22

1400

209

120

3.9

5.5

35.0

7.6

14.5

26.8

4.7

4.7

0.85

17

8.3

MAX. UNIT

CONDITIONS.

1

100

0.025

0.035

V ID=250µA, VGS=0V

␮A VDS=30V, VGS=0V

nA VGS=Ϯ20V, VDS=0V

V ID=250␮A, VDS= VGS

⍀ VGS=10V, ID=12A

⍀ VGS=4.5V, ID=10.2A

S VDS=10V,ID=12A

pF

pF

VDS=25V, VGS=0V,

f=1MHz

pF

ns

ns

VDD =10V, ID=1A

RG≅6.0Ω, VGS=4.5V

ns (refer to test circuit)

ns

nC VDS=15V,VGS=5V,

ID=5.5A

(refer to test circuit)

nC VDS=15V,VGS=10V,

nC ID=5.5A

(refer to test circuit)

nC

0.95

V TJ=25°C, IS=9A,

VGS=0V

ns TJ=25°C, IF=5.5A,

di/dt= 100A/µs

nC

NOTES

(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

ISSUE 3 - AUGUST 2003

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