IRFR024N データシートの表示（PDF） - International Rectifier

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IRFR024N

HEXFET Power MOSFET

International Rectifier 

IRFR/U024N

700

V GS = 0V,

f = 1MHz

C iss = Cgs + C gd , Cds S H O R TE D

600

C rss = C gd

C oss = Cds + C gd

500

C is s

400

C oss

300

200

C rss

100

0

A

1

10

100

V DS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 10A

16

VDS = 44V

VDS = 28V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

A

0

4

8

12

16

20

Q G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

TJ = 175°C

TJ = 25°C

10

1

VGS = 0V A

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA LIMITED

BY R DS(on)

100

10µs

10

100µs

TC = 25°C

TJ = 175°C

S ingle P ulse

1

1

10

1ms

10ms

A

100

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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