55NO3LTA データシートの表示（PDF） - Philips Electronics
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55NO3LTA Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP55N03LTA series
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 kΩ
tp ≤ 50 µs pulsed;
duty cycle 25%; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load; ID = 55 A;
tp = 0.1 ms; VDD = 15 V; RGS = 50 Ω;
VGS = 5V; starting Tj = 25 °C
IAS
non-repetitive avalanche current unclamped inductive load; VDD = 15 V;
RGS = 50 Ω; VGS = 5 V; starting Tj = 25 °C
Typ
Max Unit
-
25
V
-
55
A
-
85
W
-
175
°C
11
14
mΩ
15
18
mΩ
Min
Max Unit
-
25
V
-
25
V
-
±15
V
-
±20
V
-
55
A
-
38
A
-
220
A
-
85
W
−55
+175 °C
−55
+175 °C
-
55
A
-
220
A
-
60
mJ
-
55
A
9397 750 08642
Product data
Rev. 02 — 2 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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