11N60 データシートの表示（PDF） - Fairchild Semiconductor
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11N60 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FCB11N60
Device
FCB11N60
Package
D2-PAK
Reel Size
330mm
Tape Width
24m
Quantity
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
/ ∆TJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
VGS = 0V, ID = 250µA, TJ = 150°C
ID = 250µA, Referenced to 25°C
VGS = 0V, ID = 11A
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 5.5A
(Note 4)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, ID = 11A
RG = 25Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 480V, ID = 11A
VGS = 10V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 11A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 11A
dIF/dt =100A/µs
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5.51A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Min
600
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3.0
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Typ
--
650
0.6
700
--
--
--
--
--
0.32
9.7
1148
671
63
35
95
34
98
119
56
40
7.2
21
--
--
--
390
5.7
Max Units
--
V
--
V
--
V/°C
--
V
1
µA
10
µA
100 nA
-100 nA
5.0
V
0.38
Ω
--
S
1490 pF
870
pF
--
pF
--
pF
--
pF
80
ns
205
ns
250
ns
120
ns
52
nC
--
nC
--
nC
11
A
33
A
1.4
V
--
ns
--
µC
FCB11N60 Rev. A1
2
www.fairchildsemi.com
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