11N60 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
11N60 Datasheet PDF : 8 Pages
| |||
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2.
I
D
=
250µA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 5.5 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
102 Operation in This Area
is Limited by R
DS(on)
101
100
100 us
1 ms
10 ms
DC
* Notes :
10-1
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
12.5
10.0
7.5
5.0
2.5
0.0
25
50
75
100
125
150
T , Case Temperature [oC]
C
Figure 11. Transient Thermal Response Curve
100
D =0.5
0 .2
1 0 -1
0 .1
0.05
0.02
0.01
single pulse
1 0 -2
* N otes :
1. Z θJC(t) = 1.0 oC /W M ax.
2. D uty F actor, D =t /t
12
3. T - T = P * Z (t)
JM
C
DM
θ JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u are W a ve P u lse D ura tion [se c]
FCB11N60 Rev. A1
4
www.fairchildsemi.com
Share Link: 