IRFR120 データシートの表示（PDF） - Fairchild Semiconductor
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IRFR120 Datasheet PDF : 7 Pages
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IRFR120, IRFU120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFR120, IRFU120
100
100
8.4
5.9
34
±20
50
0.33
36
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
VGS = ±20V
ID = 5.9A, VGS = 10V (Figures 8, 9)
VDS ≥ 50V, ID = 5.9A (Figure 12)
VDD = 50V, ID ≅ 8.4A, RGS = 18Ω, RL = 5.1Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 8.4A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
Measured from the Drain
Lead, 6.0mm (0.25in) from
Package to Center of Die
Measured from the Source
Lead, 6.0mm (0.25in) from
Package to Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
LD
G
LS
MIN TYP MAX UNITS
100
-
-
V
2.0
-
4.0
V
-
-
25
µA
-
-
250 µA
8.4
-
-
A
-
- ±500 nA
- 0.25 0.27 Ω
2.8 4.2
-
S
-
8.8 13
ns
-
30 45
ns
-
19 29
ns
-
20 30
ns
-
9.7 15
nC
-
2.2 3.3 nC
-
2.3 3.4 nC
-
350
-
pF
-
130
-
pF
-
24
-
pF
-
4.5
-
nH
-
7.5
-
nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Typical Solder Mount
S
-
-
3.0 oC/W
-
-
110 oC/W
©2002 Fairchild Semiconductor Corporation
IRFR120, IRFU120 Rev. B
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