IRFR120 データシートの表示（PDF） - Fairchild Semiconductor
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IRFR120 Datasheet PDF : 7 Pages
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IRFR120, IRFU120
Typical Performance Curves Unless Otherwise Specified (Continued)
100
10µs
100µs
10
1ms
OPERATION IN THIS
1
AREA IS LIMITED
BY rDS(ON)
TJ = MAX RATED
TC = 25oC
SINGLE PULSE
0.1
1
10
10ms
DC
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
15
VGS = 10V
VGS = 8V
12
9
6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 7V
VGS = 6V
VGS = 5V
3
VGS = 4V
0
0
10
20
30
40
50
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
9
6
VGS = 10V
VGS = 8.0V
VGS = 7.0V
VGS = 6.0V
3
VGS = 5.0V
VGS = 4.0V
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
10
TJ = 175oC
TJ = 25oC
1
0.1
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
VGS = 10V
1.5
1.0
VGS = 20V
0.5
0
0
8
16
24
32
40
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
©2002 Fairchild Semiconductor Corporation
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4 VGS = 10V, ID = 5.9A
1.8
1.2
0.6
0
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
IRFR120, IRFU120 Rev. B
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