SA58640 データシートの表示（PDF） - NXP Semiconductors.
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SA58640 Datasheet PDF : 20 Pages
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NXP Semiconductors
SA58640
Low-voltage mixer FM IF system
11. Dynamic characteristics
Table 5. Dynamic characteristics
Symbol Parameter
Conditions
Min
Typ
Mixer/oscillator section (external LO = 220 mV RMS value)
fi
input frequency
fosc
oscillator frequency
NF
noise figure
at 45 MHz
-
100
-
100
-
7.0
IP3I
input third-order intercept
50 Ω source;
-
−10
point
f1 = 45.0 MHz; f2 = 45.06 MHz;
input RF level = −52 dBm
Gp(conv) conversion power gain
matched 14.5 dBV step-up
50 Ω source
10
17
-
2.5
Ri(RF)
Ci(RF)
Ro(mix)
IF section
RF input resistance
RF input capacitance
mixer output resistance
single-ended input
MIXER_OUT pin
-
8
-
3.0
1.25
1.5
Gamp(IF)
Glim
αAM
Vo(aud)
SINAD
IF amplifier gain
50 Ω source
limiter gain
50 Ω source
AM rejection
30 % AM 1 kHz
audio output voltage
gain of two
signal-to-noise-and-distortion IF level = −110 dBm
ratio
-
44
-
58
-
50
60
120
-
17
THD
total harmonic distortion
-
−55
S/N
signal-to-noise ratio
no modulation for noise
-
60
Vo(RSSI) RSSI output voltage
IF; R9 = 2 kΩ
IF level = −110 dBm
[1]
-
0.5
IF level = −50 dBm
-
1.7
αRSSI(range) RSSI range
Zi(IF)
IF input impedance
Zo(IF)
IF output impedance
Zi(lim)
limiter input impedance
Zo(lim)
limiter output impedance
Vo(RMS) RMS output voltage
RF/IF section (internal LO)
measured on IF_AMP_IN pin
measured on IF_AMP_OUT pin
measured on LIM_IN pin
measured on LIM_OUT pin
measured on LIM_OUT pin
-
60
1.3
1.5
-
0.3
1.3
1.5
-
0.3
-
130
SINAD
signal-to-noise-and-distortion system; RF level = −110 dBm
ratio
-
12
Max
Unit
-
MHz
-
MHz
-
dB
-
dBm
-
dB
-
dB
-
kΩ
4.0
pF
-
kΩ
-
dB
-
dB
-
dB
-
mV
-
dB
-
dB
-
dB
1.0
V
2.4
V
-
dB
-
kΩ
-
kΩ
-
kΩ
-
kΩ
-
mV
-
dB
[1] The generator source impedance is 50 Ω, but the SA58640 input impedance at pin 18 (IF_AMP_IN) is 1500 Ω. As a result, IF level
refers to the actual signal that enters the SA58640 IF amplifier input (pin 18), which is about 21 dB less than the ‘available power’ at the
generator.
SA58640
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 12 April 2011
© NXP B.V. 2011. All rights reserved.
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