PEMB19 データシートの表示（PDF） - NXP Semiconductors.
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PEMB19 Datasheet PDF : 10 Pages
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NXP Semiconductors
PEMB19; PUMB19
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −1 mA
IC = −10 mA; IB = −0.5 mA
R1
bias resistor 1 (input)
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min
Typ
-
-
-
-
-
-
-
-
100
-
-
-
15.4
22
-
-
Max
Unit
−100
nA
−1
µA
−50
µA
−100
nA
-
−150
mV
28.6
kΩ
3
pF
103
(1)
hFE
(2)
(3)
102
006aaa196
−1
VCEsat
(V)
−10−1
006aaa197
(1) (2) (3)
10
−10−1
−1
−10
−102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10−2
−10−1
−1
−10
−102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PEMB19_PUMB19_2
Product data sheet
Rev. 02 — 1 September 2009
© NXP B.V. 2009. All rights reserved.
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