MPSA14 データシートの表示（PDF） - Fairchild Semiconductor
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MPSA14 Datasheet PDF : 14 Pages
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MPSA14
MMBTA14
PZTA14
C
BE
TO-92
C
SOT-23
Mark: 1N
E
B
C
SOT-223
E
C
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced
from Process 05.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
30
30
10
1.2
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
MPSA14
625
5.0
83.3
200
Max
*MMBTA14
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA14
1,000
8.0
125
Units
mW
mW /°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
A14, Rev B
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