MPSA14 データシートの表示（PDF） - Fairchild Semiconductor

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MPSA14

NPN Darlington Transistor

Fairchild Semiconductor 

NPN Darlington Transistor

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CES

Collector-Emitter Breakdown Voltage

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

IC = 100 µA, IB = 0

VCB = 30 V, IE = 0

VEB = 10 V, IC = 0

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 10 mA, VCE = 5.0 V

IC = 100 mA, VCE = 5.0 V

IC = 100 mA, IB = 0.1 mA

IC = 100 mA, VCE = 5.0 V

30

V

100

nA

100

nA

10,000

20,000

1.5

V

2.0

V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 5 V,

125

f = 100 MHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

MHz

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

250

VCE = 5V

200

125 °C

150

25 °C

100

- 40 °C

50

0

0.001

0.01

0.1

1

I C - COLLECTOR CURRENT (A)

Base-Emitter Saturation

Voltage vs Collect or Current

2

β = 1000

1.6

- 40 °C

25 °C

1.2

125 °C

0.8

0.4

0

1

10

100

1 00 0

IC - COLLECTOR CURRE NT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

1.6

β = 1000

1.2

- 40 °C

0.8

0.4

25°C

125 °C

0

1

10

100

1000

I C - COLLECTOR CURRE NT (mA)

Base Emitter ON Voltage vs

Collector Current

2

1.6

- 40 °C

25 °C

1.2

125 °C

0.8

0.4

VCE = 5V

0

1

10

10 0

1 00 0

I C - COLLECTOR CURRE NT (mA)

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