STS7C4F30L データシートの表示（PDF） - STMicroelectronics
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STS7C4F30L Datasheet PDF : 10 Pages
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STS7C4F30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
N-CHANNEL
VDD = 15 V
ID = 3.5 A
RG = 4.7 Ω
VGS = 4.5 V
P-CHANNEL
VDD = 15 V
ID = 2 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 1)
N-CHANNEL
VDD = 24V ID = 7A VGS = 5V
P-CHANNEL
VDD = 24V ID = 4A VGS = 5V
(see test circuit, Figure 2)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
Min.
Typ.
22
25
60
35
17.5
12.5
4
5
7
3
Max. Unit
ns
ns
ns
ns
23 nC
16 nC
nC
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
Turn-off Delay Time
tf
Fall Time
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
N-CHANNEL
VDD = 15 V
ID = 3.5 A
RG = 4.7 Ω VGS = 4.5 V
P-CHANNEL
VDD = 15 V
ID = 2 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, Figure 1)
Test Conditions
ISD
Source-drain Current
ISDM (•) Source-drain Current (pulsed)
VSD(∗) Forward On Voltage
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 7 A
ISD = 4 A
VGS = 0
VGS = 0
N-CHANNEL
ISD = 7 A di/dt = 100A/µs
VDD = 15 V Tj =150 oC
P-CHANNEL
ISD = 4 A di/dt = 100A/µs
VDD = 15 V Tj =150 oC
(see test circuit, Figure 3)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•) Pulse width limited by safe operating area.
Min.
n-ch
p-ch
n-ch
p-ch
Min.
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
Typ.
42
125
10
35
Typ.
50
45
40
36
1.6
1.6
Max. Unit
ns
ns
ns
ns
Max. Unit
7
A
4
A
28
A
16
A
1.2 V
1.2 V
ns
ns
nC
nC
A
A
3/10
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