BTA204W-600C データシートの表示（PDF） - NXP Semiconductors.
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BTA204W-600C Datasheet PDF : 8 Pages
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NXP Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA204W series B and C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-sp
Rth j-a
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
MIN. TYP. MAX. UNIT
-
-
15 K/W
- 156 - K/W
-
70
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current2
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
BTA204W-
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
IT = 2 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MIN. TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
0.7
0.25 0.4
-
0.1
MAX.
...B ...C
50
35
50
35
50
35
30
20
45
30
30
20
30
20
1.5
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
BTA204W- ...B ...C
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 1 A;
dVcom/dt = 20V/μs; gate open circuit
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/μs
1000
6
-
1000
3
-
TYP.
-
-
2
UNIT
V/μs
A/ms
μs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
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