BT169H(2008) データシートの表示（PDF） - NXP Semiconductors.

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BT169H
(Rev.:2008)

Thyristor, logic level, high voltage

NXP Semiconductors. 

BT169H

Thyristor, logic level, high voltage

Rev. 01 — 31 March 2008

Product data sheet

1. Product profile

1.1 General description

Passivated sensitive gate thyristor in a SOT54 plastic package.

1.2 Features

I Very sensitive gate

I Direct interfacing to logic level ICs

I High blocking voltage

I Direct interfacing to low power gate drive

circuits

1.3 Applications

I General purpose switching and phase I Earth leakage circuit breakers or

control

Ground Fault Circuit Interrupters (GFCI)

1.4 Quick reference data

I VRRM, VDRM ≤ 800 V

I IT(RMS) ≤ 0.8 A

I IT(AV) ≤ 0.5 A

I IGT ≤ 100 µA

I ITSM ≤ 9 A (t = 10 ms)

2. Pinning information

Table 1.

Pin

1

2

3

Pinning

Description

anode (A)

gate (G)

cathode (K)

Simplified outline

Graphic symbol

A

K

G

sym037

321

SOT54 (TO-92)

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