5N150UF データシートの表示（PDF） - Fairchild Semiconductor

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5N150UF

Insulated Gate Bipolar Transistor (IGBT)

Fairchild Semiconductor 

SGF5N150UF

IGBT

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT)

provides low conduction and switching losses.

SGF5N150UF is designed for the Switching Power

Supply applications.

Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A

• High Input Impedance

Application

Switching Power Supply - High Input Voltage Off-line Converter

GCE

TO-3PF

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VCES

VGES

IC

ICM (1)

PD

TJ

Tstg

TL

Description

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

@ TC = 25°C

@ TC = 100°C

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25°C

@ TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C

G

E

SGF5N150UF

1500

± 20

10

5

20

62.5

25

-55 to +150

-55 to +150

300

Units

V

V

A

A

A

W

W

°C

°C

°C

Typ.

--

--

Max.

2.0

40

Units

°C/W

°C/W

©2003 Fairchild Semiconductor Corporation

SGF5N150UF Rev. B

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