2SA1031 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

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2SA1031

Silicon PNP Epitaxial

Renesas Electronics 

2SA1031, 2SA1032

Electrical Characteristics (Ta = 25°C)

2SA1031

2SA1032

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V(BR)CBO

–30 —

—

–55 —

—V

IC = –10 µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

–30 —

—

–50 —

—V

IC = –1 mA, RBE = ∞

Emitter to base

breakdown voltage

V(BR)EBO

–5

—

—

–5

—

—V

IE = –10 µA, IC = 0

Collector cutoff current

Emitter cutoff current

DC current trnsfer ratio

I CBO

I EBO

hFE*1

Base to emitter voltage VBE

Collector to emitter

saturation voltage

VCE(sat)

Gain bandwidth product fT

Collector output

Cob

capacitance

— — –0.5 — — –0.5 µA VCB = –18 V, IE = 0

— — –0.5 — — –0.5 µA VEB = –2 V, IC = 0

100 — 500 100 — 320

VCE = –12 V,

IC = –2 mA

— — –0.8 — — –0.8 V

VCE = –12 V,

IC = –2 mA

— — –0.2 — — –0.2 V

IC = –10 mA,

IB = –1 mA

200 280 —

200 280 —

MHz VCE = –12 V,

IC = –2 mA

— 3.3 4.0 — 3.3 4.0 pF VCB = –10 V, IE = 0,

f = 1 MHz

Noise figure

NF

——5

——5

dB VCE = –6 V,

IC = –0.1 mA,

Rg = 500 Ω,

f = 120 Hz

Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.

B

C

D

2SA1031 100 to 200 160 to 320 250 to 500

2SA1032 100 to 200 160 to 320 —

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