2SA1029 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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2SA1029 Datasheet PDF : 5 Pages
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2SA1029, 2SA1030
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
2SA1029
2SA1030
Unit
–30
–55
V
–30
–50
V
–5
–5
V
–100
–100
mA
100
100
mA
300
300
mW
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA1029
2SA1030
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–30 —
—
–55 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–30 —
—
–50 —
—V
IC = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—V
IE = –10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
I CBO
I EBO
hFE*1
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
Gain bandwidth product fT
Collector output
Cob
capacitance
— — –0.5 — — –0.5 µA VCB = –18 V, IE = 0
— — –0.5 — — –0.5 µA VEB = –2 V, IC = 0
100 — 500 100 — 320
VCE = –12 V,
IC = –2 mA
— — –0.8 — — –0.8 V
VCE = –12 V,
IC = –2 mA
— — –0.2 — — –0.2 V
IC = –10 mA,
IB = –1 mA
200 280 —
200 280 —
MHz VCB = –12 V,
IC = –2 mA
— 3.3 4.0 — 3.3 4.0 pF VCB = –10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SA1029 and 2SA1030 are grouped by hFE as follows.
B
C
D
2SA1029 100 to 200 160 to 320 250 to 500
2SA1030 100 to 200 160 to 320 —
See characteristic curves of 2SA1031 and 2SA1032.
2
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