07N60S5 データシートの表示（PDF） - Infineon Technologies

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07N60S5

Cool MOS™ Power Transistor

Infineon Technologies 

SPU07N60S5

SPD07N60S5

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 7.3 A, Tj = 125 °C

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

Soldering temperature, *)

1.6 mm (0.063 in.) from case for 10s

Symbol

dv/dt

Value

20

Unit

V/ns

Symbol

RthJC

RthJA

RthJA

Tsold

Values

Unit

min. typ. max.

-

-

1.5 K/W

-

-

75

-

-

75

-

-

50

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=7.3A

- 700

breakdown voltage

-V

-

Gate threshold voltage

Zero gate voltage drain current

VGS(th) ID=350µΑ, VGS=VDS 3.5

I DSS

VDS=600V, VGS=0V,

Tj=25°C,

-

Tj=150°C

-

4.5 5.5

µA

0.5 1

- 100

Gate-source leakage current

I GSS

VGS=20V, VDS=0V

-

- 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A,

Ω

Tj=25°C

- 0.54 0.6

Tj=150°C

- 1.46 -

Gate input resistance

RG

f=1MHz, open Drain

-

19

-

*) TO252: reflow soldering, MSL1; TO251: wavesoldering

Rev. 2.6

Page 2

2013-05-10

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