2SA1085ETZ-E データシートの表示（PDF） - Renesas Electronics

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2SA1085ETZ-E

Silicon PNP Epitaxial

Renesas Electronics 

2SA1084, 2SA1085

Electrical Characteristics

Item

Collector to base

breakdown voltage

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE*1

2SA1084

Min Typ Max

–90 —

—

–90 —

—

–5

—

—

—

— –0.1

—

— –0.1

250 — 800

2SA1085

Min Typ Max

–120 —

—

–120 —

—

–5

—

—

—

— –0.1

—

— –0.1

250 — 800

Collector to emitter

saturation voltage

VCE(sat)

—

— –0.2 —

— –0.2

Base to emitter voltage

VBE

— –0.6 —

— –0.6 —

Gain bandwidth product

fT

—

90

—

—

90

—

Collector output

Cob

—

3.5

—

—

3.5

—

capacitance

Noise voltage referred to

en

input

—

0.5

—

— 0.5

—

Note: 1. The 2SA1084 and 2SA1085 are grouped by hFE as follows.

D

E

250 to 500 400 to 800

(Ta = 25°C)

Unit

Test conditions

V IC = –10 µA, IE = 0

V IC = –1 mA,

RBE = ∞

V IE = –10 µA, IC = 0

µA

µA

V

V

MHz

pF

nV/

√Hz

VCB = –50 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V,

IC = –2 mA

IC = –10 mA,

IB = –1 mA

VCE = –12 V,

IC = –2 mA

VCE = –12 V,

IC = –2 mA

VCB = –10 V, IE = 0,

f = 1 MHz

VCE = –6V,

IC = –10 mA,

f = 1 kHz,

Rg = 0, ∆f = 1Hz

Rev.3.00 Aug 10, 2005 page 2 of 5

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