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2SA1085ETZ データシートの表示(PDF) - Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SA1085ETZ
Silicon PNP Epitaxial
Renesas Electronics
2SA1085ETZ Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SA1084, 2SA1085
Electrical Characteristics
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
2SA1084
Min Typ Max
–90 —
—
–90 —
—
–5
—
—
—
— –0.1
—
— –0.1
250 — 800
2SA1085
Min Typ Max
–120 —
—
–120 —
—
–5
—
—
—
— –0.1
—
— –0.1
250 — 800
Collector to emitter
saturation voltage
V
CE(sat)
—
— –0.2 —
— –0.2
Base to emitter voltage
V
BE
— –0.6 —
— –0.6 —
Gain bandwidth product
f
T
—
90
—
—
90
—
Collector output
Cob
—
3.5
—
—
3.5
—
capacitance
Noise voltage referred to
e
n
input
—
0.5
—
— 0.5
—
Note: 1. The 2SA1084 and 2SA1085 are grouped by h
FE
as follows.
D
E
250 to 500 400 to 800
(Ta = 25°C)
Unit
Test conditions
V I
C
= –10
µ
A, I
E
= 0
V I
C
= –1 mA,
R
BE
=
∞
V I
E
= –10
µ
A, I
C
= 0
µ
A
µ
A
V
V
MHz
pF
nV/
√
Hz
V
CB
= –50 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –6V,
I
C
= –10 mA,
f = 1 kHz,
R
g
= 0,
∆
f = 1Hz
Rev.3.00 Aug 10, 2005 page 2 of 5
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