RD15HVF1(2006) データシートの表示（PDF） - MITSUBISHI ELECTRIC

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RD15HVF1
(Rev.:2006)

MITSUBISHI RF POWER MOS FET RoHS Compliance, Silicon MOSFET Power Transistor

MITSUBISHI ELECTRIC  

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MOS FET

RD15HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL

PARAMETER

CONDITIONS

VDSS

Drain to source voltage Vgs=0V

VGSS

Gate to source voltage

Vds=0V

Pch

Channel dissipation

Tc=25°C

Pin

Input power

Zg=Zl=50Ω

ID

Drain current

-

Tch

Channel temperature

-

Tstg

Storage temperature

-

Rth j-c Thermal resistance

junction to case

Note 1: Above parameters are guaranteed independently.

Note 2: Over 300MHz use spec is 6W

RATINGS

30

+/-20

48

1.5(Note2)

4

150

-40 to +150

2.6

UNIT

V

V

W

W

A

°C

°C

°C/W

ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)

SYMBOL

PARAMETER

CONDITIONS

LIMITS

MIN TYP MAX.

IDSS Zero gate voltage drain current VDS=17V, VGS=0V

-

- 100

IGSS Gate to source leak current

VGS=10V, VDS=0V

-

-

1

VTH Gate threshold Voltage

VDS=12V, IDS=1mA

1.5 2.0 2.5

Pout1 Output power

VDD=12.5V, Pin=0.6W,

15 18

-

ηD1 Drain efficiency

f=175MHz,Idq=0.5A

55 60

-

Pout2 Output power

VDD=12.5V, Pin=3W,

15 18

-

ηD2 Drain efficiency

f=520MHz,Idq=0.5A

50 55

-

Load VSWR tolerance

VDD=15.2V,Po=15W(PinControl)

No destroy

f=175MHz,Idq=0.5A,Zg=50Ω

Load VSWR=20:1(All Phase)

Load VSWR tolerance

VDD=15.2V,Po=15W(PinControl)

No destroy

f=520MHz,Idq=0.5A,Zg=50Ω

Load VSWR=20:1(All Phase)

Note : Above parameters , ratings , limits and conditions are subject to change.

UNIT

uA

uA

V

W

%

W

%

-

-

RD15HVF1

MITSUBISHI ELECTRIC

2/9

10 Jan 2006

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