RD15HVF1(2006) データシートの表示（PDF） - MITSUBISHI ELECTRIC

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RD15HVF1
(Rev.:2006)

MITSUBISHI RF POWER MOS FET RoHS Compliance, Silicon MOSFET Power Transistor

MITSUBISHI ELECTRIC  

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MOS FET

RD15HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to

personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit

designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable

material or (iii) prevention against any malfunction or mishap.

warning !

Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme

short current flow between the drain and the source of the device. These results causes in fire or injury.

RD15HVF1

MITSUBISHI ELECTRIC

9/9

10 Jan 2006

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