2SD1490 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SD1490

Silicon NPN Epitaxial / TO-92 Type

Hitachi -> Renesas Electronics 

2SD1490

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

70

V

50

V

6

V

1

A

0.75

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 70

—

voltage

Collector to emitter breakdown V(BR)CEO 50

—

voltage

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

80

Collector output capacitance Cob

—

20

Note: 1. The 2SD1490 is grouped by hFE as follows.

B

C

D

100 to 200 160 to 320 250 to 500

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

1

µA

0.2 µA

500

0.3 V

VCB = 80 V, IE = 0

VEB = 6 V, IC = 0

VCE = 2 V, IC = 0.1 A

IC = 1 A, IB = 0.1 A

—

MHz VCE = 2 V, IC = 10 mA

—

pF

VCB = 10 V, IE = 0, f = 1 MHz

See characteristic curves of 2SD789.

2

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