2SK2085 データシートの表示（PDF） - Renesas Electronics

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2SK2085

2SK2085 / Silicon N-Channel MOS FET

Renesas Electronics 

2SK2085

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

100

Gate to source breakdown

voltage

V(BR)GSS

±20

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

1.0

Static drain to source on state RDS(on)

—

resistance

—

Typ

—

—

—

—

—

0.6

0.75

Forward transfer admittance |yfs|

0.7 1.2

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

130

50

12

7

6.5

55

20

0.85

80

Max

—

—

±10

100

2.0

0.9

1.35

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 80 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 0.5 A

VGS = 10 V*1

ID = 0.5 A

VGS = 4 V*1

ID = 0.5 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 0.5 A

VGS = 10 V

RL = 60

IF = 1.0 A, VGS = 0

IF = 1.0 A, VGS = 0,

diF / dt = 50 A / µs

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