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2SK2085 データシートの表示(PDF) - Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK2085
2SK2085 / Silicon N-Channel MOS FET
Renesas Electronics
2SK2085 Datasheet PDF : 12 Pages
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
1A
0.6
0.4
0.5 A
0.2
I
D
= 0.2 A
0
2
4
6
8 10
Gate to Source Voltage V
GS
(V)
2SK2085
Static Drain to Source State Resistance
vs. Drain Current
2
Pulse Test
1
V
GS
= 4 V
0.5
10 V
0.2
0.1
0.1 0.2
0.5 1 2
5
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
0.2 A
0.5 A
1.2
I
D
=1A
V
GS
= 4 V
0.8
0.4
10 V
1A
0.5 A
0.2 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25 °C
2
25 °C
75 °C
1
0.5
0.2
V
DS
= 10 V
Pulse Test
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I
D
(A)
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