4800B データシートの表示（PDF） - Philips Electronics

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4800B

N-channel TrenchMOS logic level FET

Philips Electronics 

SI4800

N-channel TrenchMOS™ logic level FET

M3D315

Rev. 02 — 17 February 2004

Product data

1. Product profile

1.1 Description

N-channel enhancement mode field-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

s Low gate charge

s Low on-state resistance

s Surface mounted package

s Fast switching.

1.3 Applications

s Portable appliances

s Lithium-ion battery chargers

s Notebook computers

s DC-to-DC converters.

1.4 Quick reference data

s VDS ≤ 30 V

s Ptot ≤ 2.5 W

s ID ≤ 9 A

s RDSon ≤ 18.5 mΩ

2. Pinning information

Table 1:

Pin

1,2,3

4

5,6,7,8

Pinning - SOT96-1 (SO-8), simplified outline and symbol

Description

Simplified outline

source (s)

gate (g)

8

5

drain (d)

1

Top view

4

MBK187

SOT96-1 (SO8)

Symbol

d

g

MBB076

s

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