BAV23 データシートの表示（PDF） - NXP Semiconductors.

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BAV23

Dual high-voltage switching diodes

NXP Semiconductors. 

BAV23 series

Dual high-voltage switching diodes

Rev. 07 — 19 March 2010

Product data sheet

1. Product profile

1.1 General description

Dual high-voltage switching diodes, encapsulated in small Surface-Mounted

Device (SMD) plastic packages.

Table 1. Product overview

Type number

Package

NXP

BAV23A

SOT23

BAV23C

SOT23

BAV23S

SOT23

BAV23

SOT143B

JEDEC

TO-236AB

TO-236AB

TO-236AB

-

Configuration

dual common anode

dual common cathode

dual series

dual isolated

1.2 Features and benefits

 High switching speed: trr  50 ns

 Low leakage current

 Repetitive peak reverse voltage:

VRRM  250 V

 Low capacitance: Cd  2 pF

 Small SMD plastic package

1.3 Applications

 High-speed switching at high voltage

 High-voltage general-purpose switching

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter

Per diode

IR

reverse current

VR

reverse voltage

trr

reverse recovery time

Conditions

VR = 200 V

Min Typ

-

-

-

-

[1] -

-

[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.

Max

100

200

50

Unit

nA

V

ns

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