BAV23 データシートの表示（PDF） - NXP Semiconductors.
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BAV23 Datasheet PDF : 13 Pages
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NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 C
[4] -
-
65
65
Max Unit
250
mW
150
C
+150 C
+150 C
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
500 K/W
-
-
360 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 100 mA
IF = 200 mA
IR
reverse current
VR = 200 V
VR = 200 V; Tj = 150 C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
Min Typ
-
-
-
-
-
-
-
-
-
-
[1] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
Max Unit
1.0 V
1.25 V
100 nA
100 A
2
pF
50 ns
BAV23_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
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