11N60(2017) データシートの表示（PDF） - Alpha and Omega Semiconductor
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11N60 Datasheet PDF : 6 Pages
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AOT11N60L/AOTF11N60L/AOTF11N60
600V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11N60L & AOTF11N60L & AOTF11N60
have been fabricated using an advanced high voltage
MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-
DC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing
offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
D
Top View
TO-220F
700V@150℃
11A
< 0.65Ω
D
AOT11N60L
S
D
G
AOTF11N60(L)
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11N60L
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
11
8
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single plused avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
Power Dissipation B
TC=25°C
Derate above 25oC
PD
272
2.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT11N60L
65
0.5
Maximum Junction-to-Case
RθJC
0.46
* Drain current limited by maximum junction temperature.
AOTF11N60
600
±30
11*
8*
39
4.8
345
690
5
50
0.4
-55 to 150
300
AOTF11N60
65
--
2.5
G
AOTF11N60L
11*
8*
37.9
0.3
AOTF11N60L
65
--
3.3
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1.0: Sepetember 2017
www.aosmd.com
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