50N33(2009) データシートの表示（PDF） - Fairchild Semiconductor
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50N33 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGPF50N33BT
FGPF50N33BTTU
Package
TO-220F
Eco Status
RoHS
Packaging
Type
Tube
Qty per Tube
50ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA, Tc=25oC
330
VGE = 0V, IC = 250µA, Tc=125oC
340
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V, Tc=25oC
-
VCE = VCES, VGE = 0V, Tc=125oC
-
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
2.3
IC = 20A, VGE = 15V,
-
IC = 30A, VGE = 15V,
-
VCE(sat)
Collector to Emitter Saturation Voltage IC = 50A, VGE = 15V,
TC = 25oC
-
IC = 50A, VGE = 15V,
TC = 125oC
-
Dynamic Characteristics
Cies
Input Capacitance
-
Coes
Output Capacitance
VCE = 30V, VGE = 0V,
-
f = 1MHz
Cres
Reverse Transfer Capacitance
-
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
-
VCC = 200V, IC = 20A,
-
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 25oC
-
-
-
VCC = 200V, IC = 20A,
-
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
-
-
-
VCE = 200V, IC = 20A,
-
VGE = 15V
-
-
-
V
-
-
V
0.2
-
V/oC
-
20
µA
-
200
µA
-
±200
nA
3.3
4.3
V
1.2
1.5
V
1.3
-
V
1.6
-
V
1.7
-
V
980
-
pF
70
-
pF
40
-
pF
9
-
ns
33
-
ns
32
-
ns
202
-
ns
9
-
ns
37
-
ns
33
-
ns
332
-
ns
35
-
nC
6
-
nC
14
-
nC
FGPF50N33BT Rev. A
2
www.fairchildsemi.com
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