2SC3631 データシートの表示（PDF） - Renesas Electronics

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2SC3631

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

Renesas Electronics 

DATA SHEET

SILICON POWER TRANSISTOR

2SC3631-Z

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

DESCRIPTION

The 2SC3631-Z is designed for High Voltage Switching, especially in

Hybrid Integrated Circuits.

FEATURES

• High Voltage VCEO = 400 V

• High Speed tf < 0.7 μs

• Complement to 2SA1412-Z

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

500

V

Collector to Emitter Voltage

VCEO

400

V

Emitter to Base Voltage

VEBO

7

V

Collector Current (DC)

IC(DC)

2.0

A

Collector Current (pulse) Note 1

IC(pulse)

4.0

A

Total Power Dissipation (TA = 25°C) Note 2

PT

2.0

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150 °C

<R> PACKAGE DRAWING (Unit: mm)

6.5 ±0.2

5.0 ±0.2

4.4 ±0.2

4

Note

2.3 ±0.2

0.5 ±0.1

Note

123

2.3 ±0.3

0.5 ±0.1

2.3 ±0.3

0.5 ±0.1

0.15 ±0.15

TO-252 (MP-3Z)

1. Base

2. Collector

3. Emitter

4. Collector Fin

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18266EJ3V0DS00 (3rd edition)

(Previous No. TC-1664A)

Date Published July 2006 NS CP(K)

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

1985, 2006

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