FQP10N50CF データシートの表示（PDF） - Fairchild Semiconductor

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FQP10N50CF

N-Channel QFET® FRFET® MOSFET

Fairchild Semiconductor 

FQP10N50CF / FQPF10N50CF

N-Channel QFET® FRFET® MOSFET

500 V, 10 A, 610 mΩ

March 2013

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor®’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.

Features

• 10 A, 500 V, RDS(on) = 610 mΩ(Max.) @VGS = 10 V, ID = 5 A

• Low Gate Charge (Typ. 43 nC)

• Low Crss (Typ. 16 pF)

• 100% Avalanche Tested

• Fast Recovery Body Diode

D

GDS

TO-220

GD S

TO-220F

G

S

Absolute Maximum Ratings

Symbol

Parameter

VDSS

ID

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

IDM

Drain Current

- Pulsed

(Note 1)

VGSS

EAS

IAR

EAR

dv/dt

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 1)

(Note 3)

PD

Power Dissipation (TC = 25°C)

- Derate above 25°C

TJ, TSTG

TL

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

*Drain current limited by maximum junction temperature

Thermal Characteristics

FQP10N50CF FQPF10N50CF

500

10

10*

6.35

6.35*

40

40*

± 30

388

10

14.3

4.5

143

48

1.14

0.38

-55 to +150

300

Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Symbol

Parameter

RθJC

RθJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

FQP10N50CF

0.87

62.5

FQPF10N50CF

2.58

62.5

Unit

°C/W

°C/W

© 2006 Fairchild Semiconductor Corporation

FQP10N50CF / FQPF10N50CF Rev. C0

1

www.fairchildsemi.com

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