01ZA8.2 データシートの表示（PDF） - Toshiba
部品番号
コンポーネント説明
メーカー
01ZA8.2 Datasheet PDF : 3 Pages
| |||
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
01ZA8.2
Diodes for Protecting Against ESD
· Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
Tj
Tstg
Rating
Unit
100
mW
125
°C
-55~125
°C
01ZA8.2
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Symbol
VZ
ZZ
ZZK
IR
Test Condition
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 6.5 V
JEDEC
―
JEITA
―
TOSHIBA
1-2SA1A
Weight: g (typ.)
Min Typ. Max Unit
7.7
8.2
8.7
V
¾
15
¾
W
¾
20
¾
W
¾
¾
0.5
mA
Marking
Equivalent Circuit (top view)
1
2003-03-24
Share Link: 