IRFP9140 データシートの表示（PDF） - Intersil
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IRFP9140 Datasheet PDF : 7 Pages
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Data Sheet
IRFP9140
July 1999 File Number 2292.4
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFET
This is an advanced power MOSFET designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17521.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP9140
TO-247
IRFP9140
NOTE: When ordering, use the entire part number.
Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC STYLE T0-247
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-57
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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