S93VP462 データシートの表示（PDF） - Summit Microelectronics
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S93VP462 Datasheet PDF : 12 Pages
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VOLTAGE-SENSE™ Write Protected Memory
S93VP462/S93VP463
FEATURES
• Voltage-Sense Write Protection
— Low VCC Write Lockout
— All Writes Inhibited when VCC < VTRIP
— Protects Against Inadvertent Writes During
- Power-up
- Power-down
- Brown-out Conditions
— All Devices ‘Readable’ from 1.8V to 5.5V
- User Selectable VTRIP Levels
• Memory
— 1K-bit Microwire Memory
— S93VP462
– Internally Ties ORG Low
– 100% Compatible with All 8-bit
Implementations
– Sixteen Byte Page Write Capability
— S93VP463
– Internally Ties ORG High
– 100% Compatible With all 16-bit
Implementations
– Eight Word Page Write Capability
APPLICATIONS
New designs for applications where data corruption
cannot be permitted.
Replacement of existing industry standard 1K
memories.
OVERVIEW
The S93VP462 and S93VP463 are voltage monitoring
memory devices that write protect the array from inad-
vertent writes whenever VCC is below VTRIP.
Both devices have 1k-bits of E2PROM memory that is
accessible via the industry standard microwire bus. The
S93VP462 is configured with an internal ORG pin tied
low providing a 8-bit byte organization and the
S93VP463 is configured with an internal ORG pin tied
high providing a 16-bit word organization. Both the
S93VP462 and S93VP463 have page write capability.
The devices are designed for a minimum 1,000,000
program/erase cycles and have data retention in ex-
cess of 100 years.
BLOCK DIAGRAM
I
VCC 8
GND 5
+
VTRIP
-
CS 1
SK 2
DI 3
MODE
DECODE
DO 4
DATA I/O
RESET
PULSE
GENERATOR
WRITE
CONTROL
CIRCUITRY
NONVOLATILE
MEMORY
ARRAY
6
7
NC
NC
2040 ILL2.0
SUMMIT MICROELECTRONICS, Inc. • 300 Orchard City Drive, Suite 131 • Campbell, CA 95008 • Telephone 408-378-6461 • Fax 408-378-6586 • www.summitmicro.com
© SUMMIT MICROELECTRONICS, Inc. 1998
2040-01 10/23/98
Characteristics subject to change without notice
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