HN58V1001T-25 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HN58V1001T-25

1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function

Hitachi -> Renesas Electronics 

HN58V1001 Series

1M EEPROM (128-kword × 8-bit)

Ready/Busy and RES function

ADE-203-314G (Z)

Rev. 7.0

Oct. 31, 1997

Description

The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-

bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming

function to make the write operations faster.

Features

• Single 3 V supply: 2.7 V to 5.5 V

• Access time: 250 ns (max)

• Power dissipation

 Active: 20 mW/MHz, (typ)

 Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 15 ms (max)

• Automatic page write (128 bytes): 15 ms (max)

• Data polling and RDY/Busy

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 104 erase/write cycles (in page mode)

• 10 years data retention

• Software data protection

• Write protection by RES pin

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