MT28S2M32B1LC データシートの表示（PDF） - Micron Technology

部品番号

コンポーネント説明

メーカー

MT28S2M32B1LC

SYNCFLASH® MEMORY

Micron Technology 

COMMANDS

The following Truth Tables provide a quick reference of available

commands for Flash memory interface operation. A written descrip-

tion of each command is found in the Flash Memory Functional

Description section.

TRUTH TABLE 2a – HARDWARE COMMAND SEQUENCES (HCS)

(Notes: 1–5; see notes on page 17)

OPERATION

READ DEVICE CONFIGURATION

READ STATUS REGISTER

CLEAR STATUS REGISTER

ERASE SETUP/CONFIRM

PROGRAM SETUP/CONFIRM

PROTECT BLOCK/CONFIRM

PROTECT DEVICE/CONFIRM

UNPROTECT BLOCKS/CONFIRM

UNPROTECT DEVICE/CONFIRM

ERASE NVMODE REGISTER

PROGRAM NVMODE REGISTER

DISABLE HARDWARE LCR

CHIP INITIALIZE

FIRST CYCLE

SECOND CYCLE

THIRD CYCLE

BANK

BANK

BANK

CMD ADDR6 ADDR DQ RP# CMD7 ADDR ADDR DQ RP# CMD ADDR ADDR DQ8 RP#9 NOTES

LCR 90h Bank X H ACTIVE CAROW Bank X H READ CACOL Bank X

H

11, 12

LCR 70h

X

X H ACTIVE X

X

X H READ X

X

X

H

LCR 50h

X

XH

LCR 20h Bank X H ACTIVE Row Bank X H WRITE X Bank D0h H/VHH 12, 13, 14

LCR 40h Bank X H ACTIVE Row Bank X H WRITE Col Bank DIN H/VHH 12, 13,

14, 15

LCR

60h Bank X

H ACTIVE Row10 Bank X

H WRITE

X

Bank LBDa(IN) H/VHH 12, 13,

15, 16

LCR 60h Bank X H ACTIVE X Bank X H WRITE X Bank LBDa(IN) VHH 12, 13, 16

LCR 60h Bank X H ACTIVE X Bank X H WRITE X Bank LBDb(IN) H/VHH 12, 13,

14, 15, 16

LCR 60h Bank X H ACTIVE X Bank X H WRITE X Bank LBDb(IN) VHH 12, 13, 16

LCR 30h Bank X H ACTIVE X Bank X H WRITE X Bank C0h H

12, 13

LCR A0h Bank L X H ACTIVE X Bank L X H WRITE X Bank L X

H

12, 13,

17, 18

LCR A0h Bank U X H ACTIVE X Bank U X H WRITE X Bank U X

H

12, 13,

17, 18, 19

LCR 68h Bank X H ACTIVE X Bank X H WRITE X Bank C0h H

12, 13

SDRAM

Share Link: