100NS20 データシートの表示（PDF） - Naina Semiconductor ltd.
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100NS20 Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
100NS(R)
Standard Recovery Diodes (Stud and Flat Base Type), 100A
Features
Diffused Series
Industrial grade
Available in Normal and Reverse polarity
Metric and UNF thread type
Electrical Specifications (TA = 25oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV) Maximum avg. forward current @ TC = 125oC
100
A
VFM
Maximum peak forward voltage drop @ rated
IF(AV)
1.3
V
IFSM
Maximum peak one cycle (non-rep) surge
current @ 10 msec
2200 A
I2t Maximum I2t rating (non-rep) for 5 to 10 msec 24200 A2sec
DO-205AA (DO-8)
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type
Voltage
number Code
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS), Maximum
RMS reverse
voltage
(V)
10
100
70
20
200
140
40
400
280
60
600
420
100NS(R)
80
800
560
100
1000
700
120
1200
840
140
1400
980
160
1600
1120
VR, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
IRRM, Maximum
reverse leakage
current
(mA)
15
Thermal & Mechanical Specifications (TA = 25oC, unless otherwise noted)
Symbol
Parameters
Rth(JC)
Maximum thermal resistance, junction to case
TJ
Operating junction temperature range
Tstg
Storage temperature
F
Mounting torque (non-lubricated threads)
W
Approximate allowable weight
Values
0.4
-65 to 150
-65 to 200
15 ± 10%
150
Units
oC/W
oC
oC
Nm
g
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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