10BQ100TR データシートの表示（PDF） - International Rectifier
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10BQ100TR Datasheet PDF : 7 Pages
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10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
10BQ100PbF
100
Absolute Maximum Ratings
Parameters
10BQ
IF(AV) Max. Average Forward Current
1.0
IFSM Max. Peak One Cycle Non-Repetitive 780
Surge Current
38
EAS Non- Repetitive Avalanche Energy
1.0
IAR Repetitive Avalanche Current
0.5
Units Conditions
A 50% duty cycle @ TL = 152 °C, rectangular wave form
A 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
10BQ Units
Conditions
VFM Max. Forward Voltage Drop (1)
* See Fig. 1
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Volatge Rate of Charge
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
0.78
0.89
0.62
0.72
0.5
1
42
2.0
10000
V @ 1A
V @ 2A
TJ = 25 °C
V @ 1A
V @ 2A
TJ = 125 °C
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
nH Measured lead to lead 5mm from package body
V/ µs
Thermal-Mechanical Specifications
Parameters
10BQ Units
Conditions
TJ Max. Junction Temperature Range (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL
Max. Thermal Resistance Junction
to Lead
(**)
36
°C/W DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
80 °C/W
wt Approximate Weight
0.10 (0.003) g (oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR1J
(*)
dPtot
dTj
<
1
Rth( j-a)
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
www.irf.com
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