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12N80L-TF2-T(2014) データシートの表示(PDF) - Unisonic Technologies

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12N80L-TF2-T
(Rev.:2014)
UTC
Unisonic Technologies UTC
12N80L-TF2-T Datasheet PDF : 6 Pages
1 2 3 4 5 6
12N80
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
Pulsed (Note 2)
IDM
12
A
48
A
Avalanche Current (Note 2)
IAR
12
A
TO-247
360
W
TO-3P
390
W
Power Dissipation
TO-230
PD
167
W
TO-220F2
51
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
„ THERMAL DATA
PARAMETER
TO-247
Junction to Ambient
TO-3P
TO-220F2/TO-230
TO-247
Junction to Case
TO-3P
TO-230
TO-220F2
SYMBOL
θJA
θJC
RATINGS
50
40
62.5
0.35
0.32
0.75
2.43
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-594.G

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