12N80L-T47-R データシートの表示（PDF） - Unisonic Technologies

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12N80L-T47-R

12A, 800V N-CHANNEL POWER MOSFET

Unisonic Technologies 

12N80

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

Pulsed (Note 2)

IDM

12

24

A

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

884

mJ

TO-220F/TO-220F2

35

W

Power Dissipation

TO-247

TO-3P

PD

240

W

260

W

TO-263

150

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=10mH, IAS=13.3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

 THERMAL CHARACTERISTICS

PARAMETER

TO-220F/TO-220F2

Junction to Ambient

TO-247

TO-3P

TO-263

TO-220F/TO-220F2

Junction to Case

TO-247

TO-3P

TO-263

SYMBOL

θJA

θJC

RATINGS

62.5

50

40

62.5

3.6

0.52

0.48

0.75

UNIT

°C/W

°C/W

°C/W

°C/W

°C/W

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-594.J

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