12N80L-TF3-T データシートの表示（PDF） - Unisonic Technologies

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12N80L-TF3-T

12A, 800V N-CHANNEL POWER MOSFET

Unisonic Technologies 

12N80

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate- Source Leakage Current

Forward

Reverse

BVDSS

IDSS

IGSS

ID=250µA, VGS=0V

VDS=800V, VGS=0V

VDS=640V, TC=125°C

VGS=+30V, VDS=0V

VGS=-30V, VDS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=6.0A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

CISS

COSS

VGS=0V, VDS=25V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

QGD

VDS=400V, VGS=10V, ID=12A

IG=1mA (Note 1, 2)

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=100V, VGS=10V, ID=12A,

RG=25Ω (Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=12A, VGS=0V

Body Diode Reverse Recovery Time

trr

VGS=0V, IS=12A, dIF/dt=100A/µs

Body Diode Reverse Recovery Charge

Qrr

(Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

MIN TYP MAX UNIT

800

V

10

100

µA

100 nA

-100 nA

3.0

5.0 V

1.0 Ω

2200

pF

200

pF

30

pF

61

nC

12

nC

21

nC

38

ns

25

ns

180

ns

64

ns

12 A

24 A

1.4 V

630

ns

12

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-594.J

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