150U60D データシートの表示（PDF） - Vishay Semiconductors
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150U60D Datasheet PDF : 6 Pages
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150U(R).. Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 150 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Slope resistance
Threshold voltage
Maximum forward voltage drop
SYMBOL
TEST CONDITIONS
IF(AV) 180° conduction, half sine wave
IF(RMS)
IFSM
I2t
rf
VF(T0)
VFM
DC at 110 °C
t = 10 ms
t = 8.3 ms
t = 10 ms
No voltage
reapplied
t = 8.3 ms
TJ = TJ maximum
Sinusoidal half wave,
initial TJ = TJ maximum
Ipk = 600 A, TJ = 25 °C, tp = 10 ms sinusoidal wave
VALUES
150
125
235
3000
3140
45
41
0.97
0.80
1.47
UNITS
A
°C
A
kA2s
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Maximum allowed
mounting torque + 0 - 20 %
minimum
maximum
Not lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
- 40 to 180
UNITS
°C
0.3
K/W
0.1
17
N·m
14.5
130
g
DO-205AA (DO-8)
ΔRthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION TEST CONDITIONS
UNITS
180°
0.031
0.023
120°
0.038
0.040
90°
0.048
60°
0.071
0.053
0.075
TJ = TJ maximum
K/W
30°
0.120
0.121
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93490
Revision: 21-May-08
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