M29F002BB データシートの表示（PDF） - STMicroelectronics
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M29F002BB Datasheet PDF : 22 Pages
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M29F002BT, M29F002BNT
M29F002BB, M29F002BNB
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
s SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45 ns
s PROGRAMMING TIME
– 8 µs by Byte typical
s 7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29F002BT: B0h
– Top Device Code M29F002BNT: B0h
– Bottom Device Code M29F002BB: 34h
– Bottom Device Code M29F002BNB: 34h
PLCC32 (K)
TSOP32 (N)
8 x 20mm
32
1
PDIP32 (P)
Figure 1. Logic Diagram
VCC
18
A0-A17
8
DQ0-DQ7
W
M29F002BT
E
M29F002BB
M29F002BNT
G
M29F002BNB
RP
VSS
AI02957B
April 2002
1/22
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